Journal
JOURNAL OF APPLIED PHYSICS
Volume 130, Issue 3, Pages -Publisher
AIP Publishing
DOI: 10.1063/5.0051274
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Funding
- NSFC [61874168, 62074087, 62004109]
- Science and Technology Project of Nantong City [JC2019112, JC2019006]
- Shanghai Key Laboratory of Multidimensional Information Processing, East China Normal University [2020MIP003]
- Industry-University-Research Cooperation Project of Jiangsu Province [BY2019114]
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The improved e-mode AlGaN/GaN HEMT with a gate stack beta-Ga2O3/p-GaN structure outperforms the conventional p-GaN gate HEMT, mainly due to the use of the beta-Ga2O3 layer which reduces the electric field strength in the gate region and decreases off-state leakage current. Additionally, there is a trade-off between the thickness of the beta-Ga2O3 layer and the performance of the device.
To improve the performance of the conventional p-GaN gate AlGaN/GaN high electron mobility transistors (HEMTs), we propose an improved design for e-mode AlGaN/GaN HEMT with a gate stack beta-Ga2O3/p-GaN structure. The simulated results show that the proposed device increases the threshold voltage and the gate breakdown voltage in comparison with the conventional p-GaN gate HEMT due to the use of the beta-Ga2O3 layer, which has an additional beta-Ga2O3/p-GaN heterojunction and decreases the strength of electric field in the gate region. Moreover, the proposed device exhibits a lower off-state leakage current, which can be attributed to the less donor ionized density. In addition, the impacts of the beta-Ga2O3 layer thickness are investigated. There is a trade-off between beta-Ga2O3 layer thickness and the performance of the proposed device, including threshold voltage, gate breakdown, and saturation drain current. Published under an exclusive license by AIP Publishing.
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