Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 874, Issue -, Pages -Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2021.159884
Keywords
Perovskite memristor; Capacitive behavior; Physical mechanism
Categories
Funding
- Technology Development Program of Taicang [TC2019DYDS07]
- Technology Development Program of Xi'an [201805042YD 20CG26]
- Key Research and Development Projects of Shaanxi Province [2020GY-097]
- Analytical & Testing center of Northwestern Polytechnical University
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Memristors are a new type of circuit element that combines integrated computing and storage characteristics, presenting a novel organic-inorganic hybrid perovskite (OHP) based optoelectronic coupling memristors with capacitive coupling behaviors and the ability to evolve from capacitive behavior to pure memristive behavior by changing voltage or light condition. This work opens up a new pathway for improving the resistive switching performances of OHP memristors.
Memristors are new type of circuit element with the characteristics of both integrated computing and storage, which can promote the development of artificial intelligence and memory- computing fusion technology. In this manuscript, a novel triple cation Organic-inorganic hybrid perovskite (OHP) based optoelectronic coupling memristors with structure of FTO/TiO2/Cs-0.05(FA(x)MA(1-x))(0.95)PbBryI3-y/Al were fabricated, hysteresis loops with low power consumption, high HRS/LRS ratio and obvious light response are presented. Besides, capacitive coupling behaviors are observed in current curves. By changing voltage or light condition, memristors can evolve from capacitive behavior to pure memristive behavior. Physical mechanisms are discussed to explain this phenomenon. This work opens up a way in improving the resistive switching performances of OHP memristors, and can be of great benefit to the potential application in neuromorphological analysis. (C) 2021 Elsevier B.V. All rights reserved.
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