4.7 Article

Elements distribution and interfacial structure of CaO-SiO2-10mass% MnO under CO-CO2-SO2-Ar gas

Journal

JOURNAL OF ALLOYS AND COMPOUNDS
Volume 876, Issue -, Pages -

Publisher

ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2021.160209

Keywords

Gas-slag interface; Structure; XPS; Raman; Distribution

Funding

  1. National Natural Science Foundation of China [51922003]
  2. Fundamental Research Funds for the Central Universities [FRF-TP-19-004C1]

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In this study, the interfacial element distribution and structure of CaO-SiO2-10%mass MnO slag were explored using gas-slag equilibrium experimental method and XPS detection method. The results showed that the interface sulfide capacity continuously decreases as the etching depth increases, possibly due to the d electron supplement from Mn. The structural units obtained by Raman spectroscopy are closer to the CaO-SiO2 system, while the interfacial structure tends towards the MnO-SiO2 system.
In this work, the interfacial element distribution and structure of CaO-SiO2-10%mass MnO slag was explored using the gas-slag equilibrium experimental method and XPS detection method at the temperature of 1873 K. Based on the full spectrum, the relative content of sulfur gradually decreases, the manganese has the same trend, while the calcium content keeps increasing. According to the analysis of the Mn2p and S2p spectra, it indicated that Mn and S exist as positive divalent (Mn2+) and negative divalent (S2-), respectively. The O1s fitting result indicates that the proportion of non-bridged oxygen (O-) increased, while that of bridged oxygen (O-0) decreased with the etching time increased. The structural units obtained by Raman spectroscopy are closer to the evaluation data of the CaO-SiO2 system, while the interfacial structure information tends to the MnO-SiO2 system. Although CaS is thermodynamically more stable than MnS, the reason for the sulfur accumulation in the gas-slag interface is due to the d electron supplement from Mn. Thus, the concept of interface sulfide capacity is proposed. As the etching depth increases, the interface sulfide capacity decreases continuously. Comparing XPS and Raman, the structure has a gradient change trend at the gas-slag interface, which confirms the presence of the boundary layer at the gas-slag interface. (C) 2021 Elsevier B.V. All rights reserved.

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