Investigation of photoluminescence emission from β-Ga2O3: Ce thin films deposited by spray pyrolysis technique

Ce doped Ga2O3 thin films for different doping concentrations (3 at%, 4 at%, 5 at%, 6 at%, 7 at%, and 8 at%) were deposited by spray pyrolysis method. X-ray diffraction analysis confirmed the crystalline structure as that of monoclinic beta-Ga2O3. The effect of doping on the band gap of the material was studied by UV-Visible spectroscopic method and the thickness of the film and refractive index were measured by ellipsometric technique. The photoluminescence excitation and emission spectra were recorded for pure and doped samples and the energy band scheme with possible radiative and nonradiative transitions were elucidated. Concentration quenching effect was observed, and the underlying mechanism responsible for quenching effect was studied based on Dexter theory. (C) 2021 Elsevier B.V. All rights reserved.

Automated summary

Thin films of Ce-doped Ga2O3 were deposited with different doping concentrations, with analysis of structural characteristics, band gap, photoluminescence, and concentration quenching effect. The study provides insights into the properties and behaviors of the doped Ga2O3 films.