DC electrical conductivity and resistive memory switching in Se36 Sb31Cu33 films

Se-36 Sb31Cu33 non - ordered material was synthesized by the melt-quenching procedure. Thin films of various thicknesses (125-520 nm) were obtained by thermal evaporation procedure. The DC conductivity and switching phenomenon were examined in the temperature range (293-373 K) lower than the corresponding glass transition temperature T-g. The conduction activation energy own dual values increment Delta E-sigma 1 and increment Delta E-sigma 2. The concluded outcomes of DC conductivity are interpreted in accordance with Mott and Davis model. The switching phenomenon for Se-36 Sb31Cu33 was of the memory behavior. The mean value of the threshold voltage V-th rises with raising film thickness in the examined range and reduces with enhances temperature in the corresponding examined range. The outcome results agree with the thermal model for the switching process. (C) 2021 Elsevier B.V. All rights reserved.

Automated summary

The DC conductivity and switching phenomenon of Se-36 Sb31Cu33 non-ordered material were studied at various temperatures below the corresponding glass transition temperature T-g. The study found that the conduction activation energy had dual values, the switching phenomenon exhibited memory behavior, and the mean value of the threshold voltage V-th varied with film thickness and temperature. The results were in agreement with the thermal model for the switching process.