4.1 Article

Two-impurity Scattering in Quasi-one-dimensional Systems

Journal

JETP LETTERS
Volume 114, Issue 1, Pages 45-50

Publisher

MAIK NAUKA/INTERPERIODICA/SPRINGER
DOI: 10.1134/S0021364021130038

Keywords

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Funding

  1. Basic Research Program of The Higher School of Economics
  2. Foundation for Advancement of Theoretical Physics and Mathematics Basis [20-1-5-150-1]

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In a quasi-one-dimensional system with low defect concentration, the resistivity exhibits peaks as a function of Fermi energy, with deep narrow gaps appearing at the center of each peak due to non-Born scattering effects. Scattering at rare twin pairs of close defects dominates the resistivity at the bottom of these gaps, while scattering at solitary defects is suppressed. This predicted effect is characteristic of multi-channel systems and cannot be observed in strictly one-dimensional systems.
In a quasi-one-dimensional system (a tube) with low concentration of defects n the resistivity rho has peaks (van-Hove singularities) as a function of Fermi-energy. We show that due to non-Born scattering effects a deep narrow gap should appear just in the center of each peak. The resistivity at the bottom of a gap (rho(min) proportional to n(2)) is dominated by scattering at rare twin pairs of close defects, while scattering at solitary defects is suppressed. The predicted effect is characteristic for multi-channel systems, it can not be observed in strictly one-dimensional one.

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