Optical and electrical properties of silicon-implanted α-Al2O3

We report on the optical and electrical properties of silicon-implanted c-plane and m-plane alpha-Al2O3 substrates. A 100 nm deep box profile with a silicon concentration of 3 x 10(19) cm(-3) was obtained by multiple-energy silicon implantation. Photoluminescence measurements showed that the concentration of oxygen-vacancy-related defects increased due to ion implantation and decreased by annealing at 1300 degrees C. The silicon-implanted c-plane and m-plane alpha-Al2O3 samples had a surface roughness of less than 1 nm after thermal annealing below 1300 degrees C in a nitrogen ambient. Current-voltage measurements of the silicon-implanted m-plane alpha-Al2O3 sample after annealing at 1300 degrees C showed 0.6 mu A at a bias of 100 V.

Automated summary

This study investigated the optical and electrical properties of silicon-implanted c-plane and m-plane alpha-Al2O3 substrates. Multiple-energy silicon implantation achieved a box profile with a silicon concentration of 3 x 10(19) cm(-3), leading to a decrease in oxygen-vacancy-related defects after annealing at 1300 degrees C. The surface roughness of the samples was improved to less than 1 nm after thermal annealing, and current-voltage measurements showed 0.6 mu A at a bias of 100 V for the silicon-implanted m-plane alpha-Al2O3 sample after annealing at 1300 degrees C.