4.3 Review

InGaN-based red light-emitting diodes: from traditional to micro-LEDs

Journal

JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 61, Issue SA, Pages -

Publisher

IOP Publishing Ltd
DOI: 10.35848/1347-4065/ac1a00

Keywords

InGaN; red light-emitting diodes; red micro-light-emitting diodes; chip size; electroluminescence

Funding

  1. King Abdullah University of Science and Technology (KAUST) [BAS/1/1676-01-01]

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InGaN-based LEDs are efficient light sources in the blue-green range, but their efficiency decreases when extending to the red region, posing a challenge for integrating red, green, and blue LEDs for full-color micro-LED displays. This review summarizes the recent progress in InGaN-based red LEDs of various chip sizes, including epitaxial structures, device fabrication, and optical performance.
InGaN-based LEDs are efficient light sources in the blue-green light range and have been successfully commercialized in the last decades. Extending their spectral range to the red region causes a significant reduction in LED efficiency. This challenge hinders the integration of red, green, and blue LEDs based on III-nitride materials, especially for full-color micro-LED displays. We review our recent progress on InGaN-based red LEDs with different chip sizes from hundreds to tens of micrometers, including the epitaxial structures, device fabrication, and optical performance (peak wavelength, full-width at half-maximum, light output power, efficiency, temperature stability, and color coordinates).

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