Impact of effective mass changes with mole-fraction on the analog/radio frequency benchmarking parameters in junctionless GaxIn1-xAs/GaAs field-effect transistor

In this paper, for the first time, changes in the effective mass (EM) of electron and hole with mole fraction are taken into account for extracting the benchmarking parameters of analog/radio frequency (RF) and high-frequency noise performance of junctionless (JL)-GaxIn1-xAs/GaAs via simulation. In the JL-GaxIn1-xAs/GaAs structure, considering changes in the effective mass with mole fraction is called a with-EM state, while the JL-GaxIn1-xAs/GaAs structure without considering the changes in effective mass with mole fraction is called a without-EM state. The simulation results show that, per x = 0.5, the maximum transconductance in the with-effective mass (EM) state is Gm,max = 2.3 mS/mu m, which is reduced by 8% compared to the without-EM state. The JL-Ga0.5In0.5As/GaAs device in the with-EM state has the unity gain cutoff frequency of fT = 900 GHz, minimum noise figure of Nf,min = 0.29 db, and available associated gain of Gass = 23.84 db. The fT and Gass parameters in the with-EM state decreased by 10% and 38%, respectively, compared to the without-EM state. Moreover, Nf,min in the with-EM state increased by 65% compared to the without-EM state. Our simulation results indicated that an increase in electron effective mass with the increased x can limit the analog/RF frequency and high-frequency noise performance of the JL-GaxIn1-xAs/GaAs device.

Automated summary

This study for the first time takes into account the changes in effective mass of electron and hole with mole fraction in simulation analysis of JL-GaxIn1-xAs/GaAs devices. The results show a decrease in certain performance parameters when considering the changes in effective mass, indicating a limiting effect on device performance. Therefore, the increase in electron effective mass with the increased mole fraction can impact the analog/RF frequency and high-frequency noise performance of the devices.