4.7 Article

Modelling and comparative performance analysis of tin based mixed halide perovskite solar cells with IGZO and CuO as charge transport layers

Journal

INTERNATIONAL JOURNAL OF ENERGY RESEARCH
Volume 45, Issue 11, Pages 16618-16632

Publisher

WILEY
DOI: 10.1002/er.6909

Keywords

modelling; performance optimisation; SCAPS 1D; tin based mixed halide perovskites

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This study utilized the SCAPS 1D software package to model tin-based mixed halide perovskite solar cells with IGZO and CuO as transport layers, finding that pure tin-based devices outperformed others. IGZO and CuO were identified as superior substitutes for TiO2 and SpiroMeOTAD, and back metal contacts with work function above 5.5 eV were shown to provide stable performance parameters.
n this study, SCAPS 1D software package is used for modelling tin based mixed halide perovskite solar cells (PSCs) with IGZO and CuO as electron transport material and hole transport material, respectively. Photovoltaic performance parameters of these PSCs are compared to that of pure lead based and lead-free PSCs with the same charge transport layers. The study shows that the pure tin-based PSCs are superior in performance to other device configurations. IGZO and CuO are found to be better substitutes for the commonly used unstable and expensive transport layers, TiO2 and SpiroMeOTAD. The study also shows that back metal contacts with work function above 5.5 eV provides stable performance parameters. The study includes an analysis of the influence of various input parameters of the perovskite absorber layer- thickness, dopant concentration, total defect density, band gap and electron affinity- on the photovoltaic performance parameters. PSCs with MASnI(3) as absorber layer show the best performance with a fill factor (FF) and a power conversion efficiency (PCE) of 68.38% and 25.08%, respectively. The effect of internal resistances and temperature dependence are also analysed. For PSCs with single halide perovskites as absorber layer, even a low value of series resistance of 5 omega cm(2) degrades the performance of the device and a large value of shunt resistance of 5000 omega cm(2) enhances the performance parameters of the device.

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