Journal
IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL
Volume 68, Issue 6, Pages 2315-2318Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TUFFC.2021.3057269
Keywords
III-V semiconductor materials; Aluminum nitride; Temperature sensors; Electrodes; Temperature measurement; Sensors; Substrates; Guided acoustic wave; packageless; temperature
Categories
Funding
- Direction Generale de l'Armement (DGA)
- ANR Project SAWGOOD [ANR-18-CE42-0004-01]
- CAPMAT Project (FEDER-FSE Lorraine et Massif Vosges 2014-2020)
- CAPMAT Project (Institut Carnot ICEEL)
- Ministry of Science and Higher Education of the Russian Federation [075-02-2020-1588]
- National University of Science and Technology MISiS [K2-2020-007]
- Agence Nationale de la Recherche (ANR) [ANR-18-CE42-0004] Funding Source: Agence Nationale de la Recherche (ANR)
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This study investigates a batteryless, wireless, and packageless acoustic wave sensor based on LN-Y128 substrate and AlN overlayer, demonstrating its potential applications. Experimental measurements and simulations of the AlN/IDT(Pt)/LN-Y128 bilayer structure show promising prospects for this packageless high-temperature sensor.
Batteryless, wireless, and packageless acoustic wave sensors are particularly desirable for harsh high-temperature environments. In this letter, an acoustic wave sensor based on a lithium niobate (Y + 128 degrees cut, abbreviated LN-Y128) substrate with a buried platinum interdigital transducer (IDT) in an aluminum nitride (AlN) overlayer is investigated. Previously, it was demonstrated theoretically that due to the specific properties of LN-Y128, Rayleigh-type guided waves can propagate at the AlN/IDT(Pt)/LN-Y128 interface. Here, this structure is, for the first time, studied experimentally, including the growth and properties of the AlN layer onto irregular platinum IDTs. Both Shear Horizontal and Rayleigh-type waves have been identified after the AlN deposition and the velocities are consistent with the fitted SDA-FEM-SDA (a combination of finite element modeling with spectral domain analysis) simulations. Electrical measurements with a surface perturbation and temperature measurements show that the AlN/IDT(Pt)/LN-Y128 bilayer structure is promising as a packageless high-temperature sensor.
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