Related references
Note: Only part of the references are listed.Simple and Affordable Method for Fast Transient Measurements of SiC Devices
David Garrido et al.
IEEE TRANSACTIONS ON POWER ELECTRONICS (2020)
Accurate Temperature Estimation of SiC Power MOSFETs Under Extreme Operating Conditions
Alexander Tsibizov et al.
IEEE TRANSACTIONS ON POWER ELECTRONICS (2020)
A Non-Segmented PSpice Model of SiC MOSFET With Temperature-Dependent Parameters
Hong Li et al.
IEEE TRANSACTIONS ON POWER ELECTRONICS (2019)
Impact of Termination Region on Switching Loss for SiC MOSFET
Xuan Li et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)
Impact of Cell Topology on Characteristics of 600V 4H-SiC Planar MOSFETs
Aditi Agarwal et al.
IEEE ELECTRON DEVICE LETTERS (2019)
Voltage-Dependent Capacitance Extraction of SiC Power MOSFETs Using Inductively Coupled In-Circuit Impedance Measurement Technique
Zhenyu Zhao et al.
IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY (2019)
Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs
Masahiro Watanabe et al.
2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) (2019)
Broadband TCAD mixed-mode simulation framework for predictive modeling of fast dynamic switching events
Dan Popescu et al.
2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) (2019)
Modeling of a Silicon-Carbide MOSFET With Focus on Internal Stray Capacitances and Inductances, and Its Verification
Yasushige Mukunoki et al.
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS (2018)
An Improved Compact Model for a Silicon-Carbide MOSFET and Its Application to Accurate Circuit Simulation
Yasushige Mukunoki et al.
IEEE TRANSACTIONS ON POWER ELECTRONICS (2018)
Accurate Transient Calorimetric Measurement of Soft-Switching Losses of 10-kV SiC MOSFETs and Diodes
Daniel Rothmund et al.
IEEE TRANSACTIONS ON POWER ELECTRONICS (2018)
Improved SiC Power MOSFET Model Considering Nonlinear Junction Capacitances
Zhuolin Duan et al.
IEEE TRANSACTIONS ON POWER ELECTRONICS (2018)
Measurement Methodology for Accurate Modeling of SiC MOSFET Switching Behavior Over Wide Voltage and Current Ranges
Hiroyuki Sakairi et al.
IEEE TRANSACTIONS ON POWER ELECTRONICS (2018)
Measurement and modeling of gate-drain capacitance of silicon carbide vertical double-diffused MOSFET
Michihiro Shintani et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2017)
Characterization of the gate-voltage dependency of input capacitance in a SiC MOSFET
Nathabhat Phankong et al.
IEICE ELECTRONICS EXPRESS (2010)
A physical model of high temperature 4H-SiC MOSFETs
Siddharth Potbhare et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2008)
Input and reverse transfer capacitance measurement of MOS-gated power transistors under high current flow
C Deml
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS (2001)
Share Paper
