Journal
IEEE TRANSACTIONS ON POWER ELECTRONICS
Volume 36, Issue 8, Pages 8653-8657Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPEL.2020.3048267
Keywords
Junction barrier Schottky diode; ON resistance; reverse recovery; Schottky barrier diode; SiC
Categories
Funding
- Beijing University of Technology
- Semiconductor Power Electronics Center, The University of Texas at Austin
- China Scholarship Council (CSC)
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The Huang-Pair is a novel hybrid diode concept that integrates a low forward voltage drop diode with a high voltage majority carrier switch, demonstrating flexibility in performance tradeoffs and applicability across different voltage classes.
The Huang-Pair is a novel hybrid diode concept based on the integration of a low forward voltage drop, low voltage rating diode with a high voltage majority carrier switch, such as a silicon carbide (SiC) Junction gate field-effect transistor (JFET). A 1200 V Huang-Pair is developed to demonstrate the concept in which a low voltage Si diode is paired with a 1200 V SiC JEFT, resulting in a low-forward voltage, low reverse recovery high voltage diode. The Huang-Pair is a two terminal device and its performance tradeoff between forward voltage drop, leakage current, and reverse recovery can be conducted between two discrete devices, which is more flexible. The Huang-Pair concept can also be realized by SiC MOSFET and gallium nitride MOSFET, and it can be applied to different voltage classes.
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