Demonstration of β-Ga2O3 Junction Barrier Schottky Diodes With a Baligas Figure of Merit of 0.85 GWcm2 or a 5A700 V Handling Capabilities

In this article, we report on demonstrating the first vertical beta-Ga2O3 junction barrier Schottky (JBS) diode with the implementation of thermally oxidized p-type NiO to compensate for the dilemma of the forfeit of the p-type beta-Ga2O3. With this wide-bandgap p-type NiO x, beta-Ga2O3 JBS diodes with an area of 100 x 100 mu m(2) achieve a breakdown voltage (BV) and specific ON-resistance R-on,R-sp of 1715 V and 3.45 m Omega.cm(2), respectively, yielding a wBaliga's figure of merit (FOM) of BV2/Ron, sp = 0.85 GW/cm(2), which is the highest direct-current FOM value among all beta-Ga2O3 diodes. Meanwhile, a large size JBS diode with the area of 1 x 1 mm(2) shows a forward current IF and BV of 5 A/700 V, which is also the best IF and BV combinations (FOM= 64 MW/cm(2)) among all published results about large-area Ga2O3 diodes. Dynamic switching characteristics reveal that the diode suffers from a negligible current collapse phenomenon even at a -600V and 103 s stress, showing the great promise of implementing p-NiO in the future beta-Ga2O3 power electronic devices.

Automated summary

This article reports the first vertical beta-Ga2O3 JBS diode, which successfully addresses the issue of sacrifice of p-type beta-Ga2O3 by using p-type NiO, achieving high breakdown voltage and low ON-resistance. Experimental results demonstrate that this diode has higher performance parameters and better combinations of forward current and breakdown voltage.