Backside Laser Testing of Single-Event Effects in GaN-on-Si Power HEMTs

We present backside laser testing of gallium nitride (GaN) power devices on Si substrate using optical parameters compatible with three-photon absorption in GaN and single-photon absorption in the substrate. The laser/device interaction is described. Two different kinds of transients are observed at the gate electrode and analyzed. The technique allows identifying the sensitive regions of the devices and generating destructive events.

Automated summary

Backside laser testing of gallium nitride (GaN) power devices on Si substrate using optical parameters compatible with three-photon absorption in GaN and single-photon absorption in the substrate was performed. The laser/device interaction was described, and two different kinds of transients were observed at the gate electrode and analyzed, allowing the identification of sensitive regions of the devices and generation of destructive events.