4.6 Article

Extremely Low-Loss Planar Transition From Hollow Dielectric Waveguide to Printed Circuit Board for Millimeter-Wave Interconnect

Journal

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
Volume 69, Issue 9, Pages 4010-4020

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMTT.2021.3087176

Keywords

Couplers; Metals; Integrated circuit interconnections; Integrated circuit modeling; Optical waveguides; Equivalent circuits; Couplings; Hollow dielectric waveguide (HDW); interconnect; low loss; millimeter wave (mm-wave); multigigabit; quadrature amplitude modulation (QAM); transition

Funding

  1. Industrial Technology Research Institute
  2. Ministry of Science and Technology (MOST), Taiwan [MOST 107-2221-E-002-075-MY3]

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This article demonstrates an extremely low-loss and high-speed millimeter-wave interconnect based on hollow dielectric waveguide (HDW), with only 0.68 dB transition loss at 58 GHz. The proposed technique provides a potential solution for high-throughput communication in 5G/6G networks.
An extremely low-loss and high-speed millimeter-wave (mm-wave) interconnect based on hollow dielectric waveguide (HDW) is demonstrated. Though HDW is renowned for its distinguishably low-loss transmission among all dielectric-based competitors, it is criticized for the difficulty of smooth power transition from HDW to planar backplane systems. This article presents a novel approach for planar transition from tubular HDW to printed circuit board (PCB). The proposed transition circuit is composed of a dipole-antenna-like power coupler, a matching metal adapter, and a tapered horn. The experimental result shows only 0.68-dB transition loss at 58 GHz, which is the best value compared to other approaches in the literature. In addition, thorough analysis and modeling for the proposed technique are obtained. It implies the opportunity to apply this approach for applications in higher frequency by scaling. The 16 quadrature amplitude modulation (16QAM) communication over the proposed 1-m interconnect is demonstrated with a maximum data rate of 34 Gb/s. This technique provides an extremely low-loss and structurally stable solution for HDW-based interconnect and transition, which is expected to be applied for 5G/6G high-throughput communication in the near future.

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