Journal
IEEE TRANSACTIONS ON MAGNETICS
Volume 57, Issue 7, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMAG.2021.3078583
Keywords
Magnetic devices; magnetic materials; magnetic memory; spin-orbit torques (SOTs)
Funding
- National Science Foundation [ECCS-1808826, ECCS-1941426]
- Hong Kong Research Grants Council-Early Career Scheme [26200520]
- Advanced Manufacturing and Engineering-Individual Research Grant (AME-IRG) through RIE2020 funds [A1983c0037]
- NUS Hybrid-Integrated Flexible Electronic Systems Program
- Japan Society for the Promotion of Science (JSPS) Kakenhi [19H05622]
- JST-CREST [JPMJCR19K3]
- Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) [TRR 173-268565370]
- Quantum Materials for Energy Efficient Neuromorphic Computing, an Energy Frontier Research Center - U.S. DOE, Office of Science [DE-SC0019273]
- IMEC's Industrialization Affiliation Program on magnetoresistive random-access memory (MRAM) devices
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Spin-orbit torque (SOT) is an emerging technology that allows efficient manipulation of spintronic devices, with interest expanding to various processes beyond electric field manipulation. In the past decade, research has focused on exploring materials for larger SOT efficiency. Recent developments have extended material research to include processes involving phonons, magnons, and heat.
Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins, and magnetization. More recently, interest has grown to include a variety of other processes that include phonons, magnons, or heat. Over the past decade, many materials have been explored to achieve a larger SOT efficiency. Recently, holistic design to maximize the performance of SOT devices has extended material research from a nonmagnetic layer to a magnetic layer. The rapid development of SOT has spurred a variety of SOT-based applications. In this article, we first review the theories of SOTs by introducing the various mechanisms thought to generate or control SOTs, such as the spin Hall effect, the Rashba-Edelstein effect, the orbital Hall effect, thermal gradients, magnons, and strain effects. Then, we discuss the materials that enable these effects, including metals, metallic alloys, topological insulators, 2-D materials, and complex oxides. We also discuss the important roles in SOT devices of different types of magnetic layers, such as magnetic insulators, antiferromagnets, and ferrimagnets. Afterward, we discuss device applications utilizing SOTs. We discuss and compare three- and two-terminal SOT-magnetoresistive random access memories (MRAMs); we mention various schemes to eliminate the need for an external field. We provide technological application considerations for SOT-MRAM and give perspectives on SOT-based neuromorphic devices and circuits. In addition to SOT-MRAM, we present SOT-based spintronic terahertz generators, nano-oscillators, and domain-wall and skyrmion racetrack memories. This article aims to achieve a comprehensive review of SOT theory, materials, and applications, guiding future SOT development in both the academic and industrial sectors.
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