Journal
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS
Volume 57, Issue 4, Pages 3812-3821Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TIA.2021.3069717
Keywords
Thyristors; Silicon carbide; Logic gates; Silicon; Substrates; Anodes; Switches; Current source; gate-drive circuit; pulse power; silicon carbide (SiC); thyristor
Ask authors/readers for more resources
This article presents the development and characteristics of 3 kV SiC thyristors, along with a novel current-source gate driver to enhance their switching speed and limit the peak of the current pulse. The higher gate current slew rate achieves faster and more efficient device switching transition for pulsed power applications.
The high peak current withstand capability of thyristors makes them extremely suitable for pulsed power applications. Silicon carbide (SiC) thyristors provide significant efficiency advantages compared with their silicon counterparts due to their very fast switching transitions. This article presents the development and characteristics of 3 kV SiC thyristors. A novel current-source gate driver is proposed to enhance their switching speed and, hence, maximize their benefits in pulsed power applications. The proposed driver provides a very high gate current slew rate while limiting the peak of the current pulse. The higher gate current slew rate achieves faster and, thus, more efficient device switching transition. Gate driver circuit description, variant topologies, and experimental results for a 3 kV SiC thyristor for a pulsed power application are presented to verify the proposed concepts.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available