Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 68, Issue 9, Pages 4310-4316Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2021.3100002
Keywords
AlGaN/GaN; breakdown voltage; MIS-high electron mobility transistors (HEMTs); normally-OFF; ON-resistance; ZrOx
Funding
- Suzhou Industrial Park Initiative Platform Development for Suzhou Municipal Key Laboratory for New Energy Technology [RR0140]
- Suzhou Science and Technology Program [SYG201728, SYG201923]
- Key Program Special Fund in Xi'an Jiaotong-liverpool University (XJTLU) [KSF-A-05, KSF-A-12, KSF-T-07]
- XJTLU Research Development Fund [PGRS-13-03-01and, PGRS1912003]
- British Council UK-India Education and Research Initiative (UKIERI) [IND/CONT/G/17-18/18, 184-1/2018(IC)]
- Engineering and Physical Sciences Research Council (EPSRC) [EP/P510981/1]
Ask authors/readers for more resources
Novel AlGaN/GaN MIS-HEMTs with a ZrOx charge trapping layer show low ON-state resistance and high breakdown voltage. TCAD simulation results demonstrate the charge trapping and de-trapping behaviors.
Novel normally- OFF AlGaN/GaN MIS-high electron mobility transistors (HEMTs) with a ZrOx charge trapping layer are proposed. The deposition of the ZrOx charge trapping layer on the partially recessed AlGaN in conjunction with the Al2O3 gate dielectric has been accomplished. The developed MIS-HEMTs exhibit a threshold voltage of 1.55 +/- 0.4 V and a maximum drain current of 730 +/- 6 mA/mm, while associated low ON-resistance of 7.1 +/- 0.2 Omega.mm, for a gate to drain separation of 3 mu m. The TCAD simulation results are presented to explore the charge trapping and de-trapping behaviors. Moreover, the devices exhibit a high breakdown voltage. The results indicate the merits of employing ZrOx charge trapping layer to realize the normally-OFF GaN devices with low ON-state resistance.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
