Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 68, Issue 8, Pages 3963-3967Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2021.3087115
Keywords
Boron-doped; diamond; metal-oxide-semiconductor field-effect transistor (MOSFET)
Funding
- Leading Initiative for Excellent Young Researchers Program Project
- Ministry of Education, Culture, Sports, and Technology (MEXT), Japan
- MEXT, Japan, through the KAKENHI [JP20H00313, JP20H02187, JP16H06419]
- MEXT, Japan
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The electrical properties and thermal stabilities of boron-doped diamond (B-diamond) MOS capacitor and MOS field-effect transistor (MOSFET) on a flat diamond epitaxial layer were investigated after annealing at 500 degrees C. The annealing process slightly increased the leakage current density of the B-diamond MOS capacitor. The drain-current and extrinsic transconductance maxima of the MOSFETs also showed improvements after annealing compared to the as-fabricated state. These results are significantly better than previously reported B-diamond MOSFETs.
Boron-doped diamond (B-diamond) metal-oxide-semiconductor (MOS) capacitor and MOS field-effect transistor (MOSFET) are fabricated on a flat diamond epitaxial layer. Their electrical properties and thermal stabilities after annealing at 500 degrees C are investigated. Annealing makes the leakage current density of the B-diamond MOS capacitor increase slightly. There is a larger stretch-out for the capacitance-voltage curve in the depletion region after annealing than that before annealing. The drain-current maxima for the as-fabricated and 500 degrees C-annealed MOSFETs are obtained as -0.49 and -0.60 mA/mm, respectively. Extrinsic transconductance maxima are 18.7 and 21.4 mu S/mm, respectively. These obtained values are considerably larger than those obtained by the previously reported B-diamond MOSFETs.
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