Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 68, Issue 9, Pages 4793-4796Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2021.3096497
Keywords
Logic gates; Capacitance; Wide band gap semiconductors; Aluminum gallium nitride; MODFETs; HEMTs; Threshold voltage; Conformal mapping; device modeling; fin-shaped high electron mobility transistor (HEMT); gallium nitride high electron mobility transistor (GaN HEMT); side gate capacitance; threshold voltage
Funding
- Centre for NEMS and Nanophotonics (CNNP), Indian Institute of Technology (IIT) Madras
- Science and Engineering Research Board (SERB), Government of India [CRG/2018/001081]
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Fin-shaped tri-gate structure is an alternative way to achieve positive threshold voltage shift in GaN-based HEMTs. The side-gate capacitance estimation and model development are crucial for predicting the threshold voltage of the device.
Fin-shaped tri-gate structure is an alternative way to achieve positive threshold voltage shift in gallium nitride (GaN)-based high electron mobility transistors (HEMTs). This results from the combined effect of top-gate and side-gate electric fields. In this work, side-gate capacitance of fin-shaped high electron mobility transistor (fin-HEMT) is estimated using conformal mapping technique. Subsequently, a model is developed to estimate the threshold voltage of the device by incorporating this side-gate capacitance in the existing threshold formulation. This model can be included in any existing compact model framework of HEMTs to predict the threshold voltage for fin-shaped devices. The proposed model, being completely physics-based and scalable, is useful to circuit engineers for optimal design.
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