4.6 Article

Vertical Sandwich GAA FETs With Self-Aligned High-k Metal Gate Made by Quasi Atomic Layer Etching Process

Journal

IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 68, Issue 6, Pages 2604-2610

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2021.3072879

Keywords

Gate-all-around (GAA); nanosheet (NS); nanowire (NW); quasi atomic layer etch (qALE); Si cap; SiGe channel; vertical sandwich gate-all-around field-effect transistor (VSAFET)

Funding

  1. Academy of Integrated Circuit of the Chinese Academy of Sciences (CAS) [Y7YC01X001, E0YC03X001]
  2. National Key Research and Development Program of China [2016YFA0301701]
  3. Youth Innovation Promotion Association of CAS [Y2020037]

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The study presented a new type of vertical nanowire and nanosheet field-effect transistors (FETs) called VSAFETs, fabricated with a specific process, suitable for producing high-performing p-type NS and NW VSAFETs.
We presented and demonstrated a new type of vertical nanowire (NW) and nanosheet (NS) field-effect transistors (FETs), named vertical sandwich gate-all-around FETs or VSAFETs, which were formed with the process compatible in the main stream industry. The VSAFETs with self-aligned high-k metal gates (HKMGs) were fabricated with epitaxy of Si/SiGe/Si sandwich structure, an isotropic quasi-atomic-layer-etch (qALE) process, and gate replacement process. The gate-length of VSAFETs is mainly determined by the thickness of SiGe film grown by epitaxy. The NW diameter and NS thickness could be obtained by the isotropic qALE method, which can be used to the Si-selective etching of SiGe. As a result, p-type NS and NW VSAFETs with good device characteristics were fabricated. Device performance and the influence of silicide, Ge fraction, Si cap, and high thermal process were investigated; threshold voltage tuning and reliability were also discussed.

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