Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 68, Issue 7, Pages 3684-3689Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2021.3081527
Keywords
Electronics packaging; Logic gates; MOSFET; Silicon; Schottky barriers; Nickel; Switches; Electrostatic doping; lift-off; MOSFET; nanowire; program gate at drain (PGAD); program gate at source (PGAS); reconfigurable field-effect transistor (RFET); silicidation; silicon-on-insulator; tetramethylammonium hydroxide (TMAH)
Funding
- Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany's Excellence Strategy-Cluster of Excellence Matter and Light for Quantum Computing (ML4Q) [EXC 2004/1-390534769, KN545/22-1, KN545/29-1]
- China Scholarship Council
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We investigated the operation modes of a dual-gate reconfigurable field-effect transistor (RFET) and compared the program gate at source (PGAS) with the more usual program gate at drain (PGAD) operation mode. We found that operating the RFET in PGAS mode yields a switching behavior close to a conventional MOSFET, but it needs to be traded off against strongly nonlinear output characteristics for small bias voltages. Our measurement results are supported by transport simulations employing a nonequilibrium Green's function approach.
We investigate the operation modes of a dual-gate reconfigurable field-effect transistor (RFET). To this end, dual-gate silicon-nanowire FETs are fabricated based on anisotropic wet etching of silicon and nickel silicidation yielding silicide-nanowire Schottky junctions at source and drain. We compare the program gate at source (PGAS) with the more usual program gate at drain (PGAD) operation mode. While in PGAD mode, ambipolar operation is suppressed, switching is deteriorated due to the injection through a Schottky barrier. Operating the RFET in PGAS mode yields a switching behavior close to a conventional MOSFET. This, however, needs to be traded off against strongly nonlinear output characteristics for small bias voltages. Our measurement results are supported by transport simulations employing a nonequilibrium Green's function approach.
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