Side-Lobe Level Reduction of Half-Mode Substrate Integrated Waveguide Leaky-Wave Antenna

In this communication, we introduce a novel design for mitigating the side-lobe level (SLL) of the half-mode substrate integrated waveguide (HMSIW)-based leaky-wave antenna (LWA). Applying a novel approach through modification of the side aperture of HMSIW, we achieved an SLL of -13.8 and -11.2 dB in the upper hemisphere and full space, respectively. The key novelty of this communication is the reduction of SLL in full space while the state-of-the-art antennas only mitigated the SLL in the upper hemisphere. Furthermore, tapering the open side aperture in a thin trapezoid shape led to a significant reduction of beam squint. The operating frequency band of the antenna matches the allocated 5G wireless network millimeter-wave bands from 26 to 30 GHz. The measured peak realized gain of the antenna is 10.6 dBi at 28.5 GHz. The length, width, and height of the HMSIW antenna are 70, 15, and 0.5 mm, respectively. The antenna was fabricated on a Rogers RT/Duroid 5880 substrate. Excellent agreement between the measurements and simulated results was observed. The discrepancies between the measured and simulated results were analyzed by a complete and thorough sensitivity analysis that included the effects of the fabrication tolerances, connectors' misalignment, and bending due to the mechanical stress. High gain, low SLL, and compactness are among the advantages of the proposed antenna making it a suitable candidate for the miniaturization of 5G communication systems.

Automated summary

This study introduces a novel design of a leaky-wave antenna, achieving lower side-lobe levels by modifying the side aperture of the half-mode substrate integrated waveguide. The antenna offers high gain, low SLL, and compactness, making it suitable for miniaturizing 5G communication systems.