4.7 Article

Terahertz Plasmonic Technology

Journal

IEEE SENSORS JOURNAL
Volume 21, Issue 11, Pages 12752-12763

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSEN.2020.3022809

Keywords

Plasmons; Field effect transistors; Sensor phenomena and characterization; Testing; Silicon; Physics; Field effect transistors; TeraFETs; plasmonics; terahertz technology; ballistic transport; ballistic mobility

Funding

  1. U.S. Air Force Office of Scientific Research [FA9550-19-1-0355]
  2. Army Research Office [W911NF-17-S-0002]
  3. Army Research Laboratory under ARL MSME Alliance

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The terahertz (THz) technology has wide applications, with Beyond 5G Wi-Fi and Internet of Things (IoT) as its expected killer applications. Plasmonic TeraFETs with feature sizes down to 3 nm could enable a dramatic expansion of these applications.
The terahertz (THz) technology has found applications ranging from astronomical science and earth observation to compact radars, non-destructive testing, chemical analysis, explosive detection, moisture content determination, coating thickness control, film uniformity determination, structural integrity testing wireless covert communications, medical applications (including skin cancer detection), imaging, and concealed weapons detection. Beyond 5G Wi-Fi and Internet of Things (IoT) are the expected killer applications of the THz technology. Plasmonic TeraFETs such as Si CMOS with feature sizes down to 3 nm could enable a dramatic expansion of all these applications. At the FET channel sizes below 100 nm, the physics of the electron transport changes from the collision dominated to the ballistic or quasi-ballistic transport. In the ballistic regime, the electron inertia and the waves of the electron density (plasma waves) determine the high frequency response that extends into the THz range of frequencies. The rectification and instabilities of the plasma waves support a new generation of THz and sub-THz plasmonic devices. The plasmonic electronics technology has a potential become a dominant THz electronics sensing technology when the plasmonic THz sources join the compact, efficient, and fast plasmonic TeraFET THz detectors already demonstrated and being commercialized.

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