Robust Ultraviolet Photodetection by Tailored Polycrystalline In2O3 Nanowire Synthesized Using Glancing Angle Deposition

Perpendicular In2O3 nanowire (NW) arrays have been successfully synthesized using glancing angle deposition (GLAD) inside electron-beam evaporator on p-type Si substrate by tailoring the deposition rate and substrate rotation rate. The morphologies of as-deposited In2O3 NWs structures are studied using field emission scanning electron microscope and transmission electron microscopy. The growth mechanisms of In2O3 NWs are studied. In2O3 NW shows 1.5 times enhanced optical absorption in UV region compared to In2O3 thin film (TF). In2O3 NW shows more photoluminescence emission due to the increase in active surface area to volume ratio compared to bulk TF. The In2O3 NW shows low dark current conduction compared to In2O3 TF. In2O3 NW shows --50 time enhanced photosensitivity than that of In2O3 TF at -5 V under 340 nm UV-illumination. In2O3 NW shows faster rise time (similar to 0.6519 s) and fall time (similar to 0.51 s) compared to In2O3 TF rise time (similar to 1.519 s) and fall time (similar to 0.543 s). In2O3 NW shows excellent detectivity of 9.91 x 10(13) Jones and low noise equivalent power of 2.83 x 10(-13) W. Therefore, the remarkable optoelectronic properties attained with In2O3 NW will guarantee wider promising applications in electronic and optoelectronic devices.

Automated summary

Perpendicular arrays of In2O3 nanowires were successfully synthesized using GLAD technique, showing enhanced optical absorption and photoluminescence compared to In2O3 thin films. In2O3 nanowires also exhibited faster rise and fall times, superior photosensitivity, low dark current conduction, high detectivity, and low noise equivalent power, promising wider applications in electronic and optoelectronic devices.