Journal
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Volume 31, Issue 9, Pages 1055-1058Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LMWC.2021.3086047
Keywords
Data models; Solid modeling; Gain; Scattering parameters; Integrated circuit modeling; Logic gates; Radio frequency; Black-phosphorus field-effect transistor (BPFET); RF amplifier; small-signal
Categories
Funding
- European Union [785219, 881603]
- Ministerio de Ciencia, Innovacion y Universidades [RTI2018097876-B-C21]
- European Regional Development Funds (ERDF)
- Secretaria d'Universitats i Recerca of the Departament d'Empresa i Coneixement of the Generalitat de Catalunya
- GraphCAT Project [001-P-001702]
- Instituto Politecnico Nacional [SIP/20210167]
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This study introduces a small-signal high-frequency equivalent circuit to accurately model the AC performances of black-phosphorus field-effect transistors. Using this model, high-gain high-selective radio frequency amplifiers based on BPFETs are successfully designed and demonstrated.
This work presents a small-signal high-frequency (HF) equivalent circuit (EC) to model AC performances of black-phosphorus field-effect transistors (BPFETs). The proposed EC is able to describe correctly both the experimental HF intrinsic and extrinsic figures of merit, as well as S-parameters, from different BPFET technologies. Single- and double-stage radio frequency gain amplifiers are designed at 2.4 GHz using the experimentally calibrated small-signal BPFET EC. Results show high-gain high-selective BPFET-based amplifiers.
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