Journal
IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume 56, Issue 8, Pages 2488-2502Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2021.3061760
Keywords
Active pixel sensors; ionizing radiation sensors; particle beam measurements; particle tracking; position-sensitive
Categories
Funding
- Federal Ministry of Education and Research (BMBF) [05H18VKRD1]
- Program Matter and Technology of Helmholtz Association of German Research Centers
- Heidelberg Karlsruhe Strategic Partnership
- European Union [654168]
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The high-voltage CMOS (HVCMOS) sensors are a novel type of CMOS active pixel sensors designed for ionizing particles, implemented with deep n-well option. By biasing the substrate with high negative voltage and using lowly doped substrate, a depleted region depth of at least 30 mu m can be achieved for fast detection of electrons generated by particles.
The high-voltage CMOS (HVCMOS) sensors are a novel type of CMOS active pixel sensors for ionizing particles that can be implemented in CMOS processes with deep n-well option. The pixel contains one sensor electrode formed with a deep n-well implanted in a p-type substrate. CMOS pixel electronics, embedded in shallow wells, are placed inside the deep n-well. By biasing the substrate with a high negative voltage and by the use of a lowly doped substrate, a depleted region depth of at least 30 mu m can be achieved. The electrons generated by a particle are collected by drift, which induces fast detectable signals. This publication presents a 4.2-cm(2) large HVCMOS pixel sensor implemented in a commercial 180-nm process on a lowly doped substrate and its characterization.
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