Impacts of Program/Erase Cycling on the Low-Frequency Noise Characteristics of Reconfigurable Gated Schottky Diodes

In this work, the low-frequency noise (LFN) characteristics of reconfigurable field-effect-transistor (RFET), gated Schottky Diode (GSD), are investigated. The GSD has a different 1/f noise origin depending on the operation mode (p-or n-type FET mode) and current (I-O) region (low or high I-O region). Depending on the 1/f noise origin, the effects of the program/erase (P/E) cycling differs. The n-type mode GSD operating in the high I-O region whose 1/f noise is originated from the carrier number fluctuation (CNF) shows the largest noise increase after the 10(4) P/E cycling.

Automated summary

The study reveals that the 1/f noise origin of GSD varies depending on the operation mode and current region, leading to different effects of P/E cycling. Specifically, the n-type mode GSD operating in the high I-O region shows the largest noise increase after 10⁴ P/E cycling.