Quantum Dot Color Conversion Efficiency Enhancement in Micro-Light-Emitting Diodes by Non-Radiative Energy Transfer

The quantum dot (QD) color-conversion efficiency (CCE) in GaN micro-light-emitting diodes (mu LEDs) is greatly improved by non-radiative energy transfer (NRET) mechanism. An array of deep nano-holes with a diameter of about 1 mu m was fabricated in mu LED mesas (40 x 60 mu m(2)) by nanoimprint lithography. The nano-holes were etched straight through the mu LED active region to ensure that the filled QDs were in extremely close contact with the active region. The absorption efficiency and emission efficiency of QDs are effectively improved by NRET, resulting in a super-high CCE in QD-mu LED hybrid devices. Compared to mu LED devices with conventional spin-coated QDs, the CCE of novel nano-hole mu LEDs with filled QDs has been enhanced by about 118%.

Automated summary

The quantum dot color-conversion efficiency in GaN micro-light-emitting diodes is greatly improved by utilizing a nano-hole array and non-radiative energy transfer mechanism, resulting in a significant enhancement of CCE.