Coplanar High Mobility and Interplanar Van Der Waals Heterojunction in Layered Two-Dimensional Bi2O2Se Nanosheets

In this letter, the electronic transport features of layered two-dimensional (2D) Bi-2 O-2 Se semiconductor nanosheets are characterized along the in-plane and the out-of-plane directions, respectively. The modulation of double gate is manufactured on a 26.4 nm CVD-grown Bi-2 O-2 Se-nanosheet MOSFET, thus executing the highest in-plane field-effect mobility of similar to 296 cm(2) V(-1)s(-1) at room temperature. Furthermore, the rectification behavior of charge transport across the perpendicular interlayer of Bi-2 O-2 Se nanosheet is distinctly scrutinized. Correspondingly, the existing of potential barrier between the [Bi-2 O-2](2n+) and [Se](2n-) interlayers of Bi-2 O-2 Se nanosheets is validated by the temperature-dependent current measurement and the Poole-Frenkel model. This work offers promising routes to implement high-efficient field-effect transports parallel to the in-plane direction, as well as tunable heterojunction transports across the perpendicular interlayer of 2D Bi-2 O-2 Se nanosheets.

Automated summary

This research characterizes the electronic transport features of two-dimensional Bi-2 O-2 Se semiconductor nanosheets, achieving high-efficiency field-effect transport and heterojunction transport across vertical interlayers.