Journal
IEEE ELECTRON DEVICE LETTERS
Volume 42, Issue 8, Pages 1128-1131Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2021.3092040
Keywords
Gallium nitride; p-channel; heterojunction field-effect transistors; E-mode; leakage; subthreshold swing
Categories
Funding
- ARPA-E PNDIODES Program [DE-AR0000868]
- NanoFab through NSF [ECCS-1542160]
- NASA HOTTech Program [80NSSC17K0768]
Ask authors/readers for more resources
The study presents enhancement-mode p-channel HFETs on a standard p-GaN/AlGaN/GaN HEMT platform with low off-state leakage and high-temperature stability. The hydrogen plasma treatment process was found beneficial for suppressing leakages and preserving material quality in the p-channel, enabling the monolithic integration of GaN n- and p-channel transistors without the need for regrowth. This work represents a significant step towards the implementation of GaN CMOS technology.
We report enhancement-mode p-channel heterojunction field-effect transistors (HFETs) without gate recess on a standard p-GaN/AlGaN/GaN high electron mobility transistor (HEMT) platform. The p-GaN in the gate region was partially passivated by a low-power hydrogen plasma treatment process, and the remaining active p-GaN and the underlying AlGaN formed the p-channel. The device showed a record low off-state leakage of <10(-8) A/mm and subthreshold swing (SS) of 123.0 mV/dec with a threshold voltage (V-th) of -0.6 V and high-temperature stability up to 200 degrees C. These results indicate that the hydrogen plasma treatment is beneficial for suppressing leakages and preserving excellent material quality in the p-channel. With the success of the p-HFETs, the p-GaN/AlGaN/GaN platform can enable the monolithic integration of GaN n- and p-channel transistors without the need for regrowth. This work represents a significant step towards the implementation of the GaN CMOS technology.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available