Morphological and Electrical Properties of β-Ga2O3/4H-SiC Heterojunction Diodes

beta-Ga2O3/4H-SiC heterojunction diodes were fabricated by depositing beta-Ga2O3 thin films on 4H-SiC substrates using radio frequency sputtering. X-ray diffraction (XRD) analysis revealed increased reflectivity of beta-Ga2O3 ((4) over bar 02), ((2) over bar 02) and ((6) over bar 03) crystal planes with optimized sputtering power. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were performed to confirm grain size and distribution. The Hall mobility (30.16 cm(2)/V center dot s) and carrier concentration (3.14 x 10(14) cm(-3)) showed with large and homogeneous grain distribution thin films. For these thin films, mobility and carrier concentration value could improve up to 9% and 55%. The effect of these electrical characteristics was ascribed to reduction of the grain boundary scattering. The I-V characteristics along with Hall measurement of the heterojunction diode suggest that the improvement in the threshold voltage and current density is caused by a substantial enhancement in charge carrier mobility.

Automated summary

Beta-Ga2O3/4H-SiC heterojunction diodes were fabricated by depositing beta-Ga2O3 thin films on 4H-SiC substrates using radio frequency sputtering. X-ray diffraction analysis revealed increased reflectivity of crystal planes with optimized sputtering power. The improvement in carrier concentration and mobility was attributed to reduction of grain boundary scattering, leading to enhanced electrical characteristics in the heterojunction diode.