Magnetic Proximity Effect in an Antiferromagnetic Insulator/Topological Insulator Heterostructure with Sharp Interface

We report an experimental study of electron transport properties of MnSe/(Bi,Sb)(2)Te-3 heterostructures, in which MnSe is an antiferromagnetic insulator, and (Bi,Sb)(2)Te-3 is a three-dimensional topological insulator (TI). Strong magnetic proximity effect is manifested in the measurements of the Hall effect and longitudinal resistances. Our analysis shows that the gate voltage can substantially modify the anomalous Hall conductance, which exceeds 0.1 e (2)/h at temperature T = 1.6 K and magnetic field mu (0) H = 5 T, even though only the top TI surface is in proximity to MnSe. This work suggests that heterostructures based on antiferromagnetic insulators provide a promising platform for investigating a wide range of topological spintronic phenomena.

Automated summary

An experimental study of electron transport properties of MnSe/(Bi,Sb)(2)Te-3 heterostructures was conducted, showing a strong magnetic proximity effect on the Hall effect and longitudinal resistances. The gate voltage was found to significantly modify the anomalous Hall conductance, indicating that heterostructures based on antiferromagnetic insulators provide a promising platform for investigating a wide range of topological spintronic phenomena.