Journal
CHINESE PHYSICS B
Volume 31, Issue 4, Pages -Publisher
IOP Publishing Ltd
DOI: 10.1088/1674-1056/ac2729
Keywords
beta-Ga2O3; Schottky barrier diodes; rectifying ability; breakdown voltage
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Funding
- National Key Research and Development Program of China [2018YFB2200500]
- National Natural Science Foundation of China [62050073, 62090054, 61975196]
- Key Research Program of Frontier Sciences, Chinese Academy of Sciences [QYZDY-SSW-JSC022]
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Lateral beta-Ga2O3 Schottky barrier diodes with L-shaped electrodes were fabricated on an unintentionally doped (-201) n-type beta-Ga2O3 single crystal substrate. By introducing sidewall electrodes, the diode exhibited high current density and low specific on-resistance. Temperature-dependent performance analysis showed promising results, indicating the great potential of lateral beta-Ga2O3 SBDs for future power electronic applications.
Lateral beta-Ga2O3 Schottky barrier diodes (SBDs) each are fabricated on an unintentionally doped (-201) n-type beta-Ga2O3 single crystal substrate by designing L-shaped electrodes. By introducing sidewall electrodes on both sides of the conductive channel, the SBD demonstrates a high current density of 223 mA/mm and low specific on-resistance of 4.7 m Omega.cm(2). Temperature-dependent performance is studied and the Schottky barrier height is extracted to be in a range between 1.3 eV and 1.35 eV at temperatures ranging from 20 degrees C to 150 degrees C. These results suggest that the lateral beta-Ga2O3 SBD has a tremendous potential for future power electronic applications.
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