Photo-patterned oxide films produced using polymeric metal acrylate for low-voltage thin-film transistors

Solution-processed zinc oxide (ZnO) thin-film transistors (TFTs) have received considerable attention as key elements for future electronics due to the ease of fabricating these TFTs and due to the natural abundance and hence low cost of ZnO. However, issues regarding the patterning of solution-processed ZnO semiconductor films unfortunately continue to pose a barrier to their commercialization. In this study, we optimized nanometer-thick photo-curable zinc acrylate (ZnA) films as ZnO precursors and used these precursors to prepare photo-patterned ZnO semiconductors for the fabrication of n-type TFTs. Solution-processed ZnA films were effectively micropatterned under UV light, because UV-irradiated ZnA film was not solved in etching solvent as a result of photocrosslinking of diacrylate moiety. Through a sol-gel reaction, wurtzite ZnO crystals were stably formed from the photo-patterned ZnA films. After optimizing the film thickness and by using a photo-patterned ZrOx dielectric layer, the prepared ZnO TFT exhibited stable performances with a low-voltage operation within +/- 2 V. This approach for developing a ZnO semiconductor film can be used to enable the realization of simple, inexpensive, and environmentally friendly solution-processing techniques in electronic device fields.

Automated summary

This study optimized photo-curable zinc acrylate (ZnA) films as ZnO precursors and successfully prepared photo-patterned ZnO semiconductors, providing a new approach to solve the patterning issues of solution-processed ZnO films.