4.7 Article

Structure and optical properties of ZrxHf1-xO2 films deposited by pulsed laser co-ablation of Zr and Hf targets with the assistance of oxygen plasma

Journal

CERAMICS INTERNATIONAL
Volume 48, Issue 1, Pages 587-596

Publisher

ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2021.09.137

Keywords

Thin films; Oxide materials; ZrxHf(1-x)O films; Co-ablation deposition; Plasma assisted deposition; Optical properties

Funding

  1. National Natural Science Foundation of China [11775055]

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IVB group metal oxides have shown great potential in various fields due to their excellent properties, and ternary ZrxHf1-xO2 films were successfully deposited using pulsed laser co-ablation in an oxygen plasma environment. The films are similar to binary ZrO2 and HfO2 films in structure and optical properties, highly transparent and with a monoclinic structure.
Group IVB metal oxides have demonstrated many potential applications in a variety fields owing to their excellent optical, mechanical, electrical, chemical and thermal properties. In this work, ternary oxides ZrxHf1-xO2 films with variable compositions were deposited by pulsed laser co-ablation of a Zr target and a Hf target in an oxygen plasma generated by electron cyclotron resonance microwave discharge of O2 gas. The oxygen plasma provided an environment containing a high concentration of reactive oxygen species for synthesizing oxides with the Zr and Hf species ablated from the Zr and Hf targets. The structure of the deposited films was characterized and the optical properties were evaluated together with the examination of the effects of post-deposition annealing on the structure and optical properties. The ternary ZrxHf1-xO2 films are much alike with binary ZrO2 and HfO2 films in structure and optical properties. They have a monoclinic structure and are highly transparent in a wide spectral region from mid-ultraviolet to mid-infrared. The ultraviolet absorption edge and optical band gap vary slightly with the pulse energies of the laser beams ablating the targets. Annealing in N2 resulted in the improvement in the film structure.

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