4.1 Article

Influence of the Sol-Gel-Derived Nano-Sized TiO2 and Y2O3 in Improving the Optical and Electric Properties of P(VAc/MMA)

Journal

BRAZILIAN JOURNAL OF PHYSICS
Volume 51, Issue 6, Pages 1584-1596

Publisher

SPRINGER
DOI: 10.1007/s13538-021-00979-4

Keywords

Y2O3 nanosheets; MO; polymer nanocomposites; Anatase nanoparticles; Band gap; Activation energy; AC conductivity

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Metal oxides/polymer nanocomposites prepared via sol-gel method were successfully dispersed into polymer blend, affecting its properties like optical bandgap and ac conductivity. The nano-fillers showed promising potential for applications in the semiconductor industry.
Metal oxides (MO)/polymer nanocomposites are attracting more attention due to their low cost and multifunctionality in diverse fields. In this report, two nano-sized MO (TiO2 and Y2O3) were prepared by the sol-gel method and dispersed into a biodegradable poly(vinyl acetate)/poly(methyl methacrylate), P(VAc/MMA) blend via the solution casting. The structure, chemical composition, morphology, UV-vis spectra, and dielectric and electrical properties of the prepared samples were studied. XRD and FE-SEM showed the high purity of the prepared cubic TiO2 nanoparticles (TNp) and Y2O3 nanosheets (YNs). The added MO fillers are well-dispersed inside the polymer blend and influenced its amorphous nature and surface morphology. FTIR spectra indicated a high activity of the nano-fillers towards the surrounding atmosphere, and confirmed the complexation and interaction between fillers and blend functional groups. TNp-doped films exhibited lower transmittance and narrowed the optical bandgap (E-g) of the blend from 4.03 to 3.63 eV. The effect of TNp and YNs on the dielectric modulus, ac conductivity (sigma(ac)), and the blend activation energy (E-a) were also discussed. TNp improved the sigma(ac) more effectively from 1.99 x 10(-7) to 6.292 x 10(-5) S/cm. Moreover, increasing YNs content expanded the time required for the relaxation process. The obtained TNp and their nanocomposite films are suitable for the semiconductor industry and devices.

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