Related references
Note: Only part of the references are listed.Comprehensive investigation on CF4/O2-plasma treating the interfaces of stacked gate dielectric in MoS2 transistors
Xingjuan Song et al.
APPLIED SURFACE SCIENCE (2021)
Systematic investigation of the growth kinetics of β-Ga2O3 epilayer by plasma enhanced chemical vapor deposition
C. Wu et al.
APPLIED PHYSICS LETTERS (2020)
Compensation in ((2)over-bar01) homoepitaxial β-Ga2O3 thin films grown by metalorganic vapor-phase epitaxy
Brian A. Eisner et al.
JOURNAL OF APPLIED PHYSICS (2020)
Halide vapor phase epitaxial growth of β-Ga2O3 and α-Ga2O3 films
J. H. Leach et al.
APL MATERIALS (2019)
Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
Y. Oshima et al.
APL MATERIALS (2019)
Ga2O3 metal-oxide-semiconductor field effect transistors on sapphire substrate by MOCVD
Ji-Hyeon Park et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2019)
Growth and characterization of F-doped α-Ga2O3 thin films with low electrical resistivity
Shota Morimoto et al.
THIN SOLID FILMS (2019)
Effects of nanoepitaxial lateral overgrowth on growth of α-Ga2O3 by halide vapor phase epitaxy
An-Na Cha et al.
APPLIED PHYSICS LETTERS (2019)
Lateral 1.8 kV β-Ga2O3 MOSFET With 155 MW/cm2 Power Figure of Merit
Kornelius Tetzner et al.
IEEE ELECTRON DEVICE LETTERS (2019)
Electric dipole effect in PdCoO2/β-Ga2O3 Schottky diodes for high-temperature operation
T. Harada et al.
SCIENCE ADVANCES (2019)
Controlling the threshold voltage of β-Ga2O3 field-effect transistors via remote fluorine plasma treatment
Janghyuk Kim et al.
JOURNAL OF MATERIALS CHEMISTRY C (2019)
Review-Theory and Characterization of Doping and Defects in β-Ga2O3
Marko J. Tadjer et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2019)
All-ion-implanted planar-gate current aperture vertical Ga2O3 MOSFETs with Mg-doped blocking layer
Man Hoi Wong et al.
APPLIED PHYSICS EXPRESS (2018)
Effect of deposition pressure on the structural and optical properties of Ga2O3 films obtained by thermal post-crystallization
Yikai Liao et al.
CRYSTENGCOMM (2018)
Effects of fluorine incorporation into beta-Ga2O3
Jiangcheng Yang et al.
JOURNAL OF APPLIED PHYSICS (2018)
Recent progress in the growth of β-Ga2O3 for power electronics applications
Michele Baldini et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2018)
Growth and characterization of alpha-, beta- and epsilon-phases of Ga2O3 using MOCVD and HVPE techniques
Yao Yao et al.
MATERIALS RESEARCH LETTERS (2018)
Recent Advances in β-Ga2O3-Metal Contacts
Ya-Wei Huan et al.
NANOSCALE RESEARCH LETTERS (2018)
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
S. J. Pearton et al.
JOURNAL OF APPLIED PHYSICS (2018)
Effect of surface treatments on electrical properties of beta-Ga2O3
Jiancheng Yang et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2018)
High-Performance Depletion/Enhancement-Mode β-Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm
Hong Zhou et al.
IEEE ELECTRON DEVICE LETTERS (2017)
Self-trapped holes in β-Ga2O3 crystals
B. E. Kananen et al.
JOURNAL OF APPLIED PHYSICS (2017)
Opportunities and Future Directions for Ga2O3
Michael A. Mastro et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2017)
Tuning the electrical performance of metal oxide thin-film transistors via dielectric interface trap passivation and graded channel modulation doping
Zhiheng Wu et al.
JOURNAL OF MATERIALS CHEMISTRY C (2017)
Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating
Stephen A. O. Russell et al.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2017)
P-type β-gallium oxide: A new perspective for power and optoelectronic devices
Ekaterine Chikoidze et al.
MATERIALS TODAY PHYSICS (2017)
Zero-Power-Consumption Solar-Blind Photodetector Based on β-Ga2O3/NSTO Heterojunction
Daoyou Guo et al.
ACS APPLIED MATERIALS & INTERFACES (2017)
Recent progress in Ga2O3 power devices
Masataka Higashiwaki et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2016)
Chemistry studies of SF6/CF4, SF6/O2 and CF4/O2 gas phase during hollow cathode reactive ion etching plasma
L. L. Tezani et al.
VACUUM (2014)
Si-Ion Implantation Doping in β-Ga2O3 and Its Application to Fabrication of Low-Resistance Ohmic Contacts
Kohei Sasaki et al.
APPLIED PHYSICS EXPRESS (2013)
Effect of metals and annealing on specific contact resistivity of GeTe/metal contacts
E. K. Chua et al.
APPLIED PHYSICS LETTERS (2012)
Oxygen vacancies and donor impurities in β-Ga2O3
J. B. Varley et al.
APPLIED PHYSICS LETTERS (2010)
Share Paper
