Journal
APPLIED SURFACE SCIENCE
Volume 558, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2021.149936
Keywords
beta-Ga2O3 MOFETs; CF4 plasma treatment; Ohmic contacts; Fluorine doping
Categories
Funding
- National Research Foundation of Korea - Ministry of Science and ICT (MSIT, Korea) [NRF-2019R1G1A1100204]
- Dongil Culture and Scholarship Foundation
- Institute of Information & communications Technology Planning & Evaluation (IITP) - Korea government (MSIT) [2020-0-02102-001]
- Institute for Information & Communication Technology Planning & Evaluation (IITP), Republic of Korea [2020-0-02102-001] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The electrical characteristics of beta-Ga2O3 film were significantly improved using CF4 plasma treatment, allowing the MOSFET to exhibit improved field-effect mobility and on/off ratio. The incorporation of fluorine enhanced both surface and bulk properties of the material, leading to successful ohmic contact formation without post-thermal annealing.
In this work, we demonstrate the lateral metal-oxidesemiconductor field-effect transistors (MOSFETs) with beta-Ga2O3 film (thickness = 150 nm) grown on a c-plane sapphire substrate by a hydride vapor phase epitaxy (HVPE) method using a CF4-based plasma treatment. By incorporating fluorine (F) the electrical characteristics of the surface and bulk regions of the resistive beta-Ga2O3 film could be significantly improved. The analyses by secondary ion mass spectrometry and x-ray photoemission spectroscopy confirmed the formation of the substitutional fluorine, F-O, with its peak concentration of 2.3 x 10(18) cm(-3) at 5 similar to 10 nm deep from the surface and about 10(15) similar to 10(16) cm(-3) in the bulk region. While the argon-plasma treatment was insufficient for making a Ti/Au/Ti metal contact ohmic, the same contact formed on the CF4-treated surface showed an ohmic behavior with specific resistivity of 2.0 x 10(-3) Omega.cm(2) and contact resistance of 0.8 Omega.m without any post thermal annealing. With the improvement of the electrical properties in both the surface and bulk regions, the HVEP-grown heteroepitaxial beta-Ga2O3 MOSFET exhibited the field-effect mobility of up to 5.3 cm(2)/V.s and on/off ratio of 10(6).
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