Bidirectional negative differential resistance in AlN/GaN resonant tunneling diodes grown on freestanding GaN

In this paper, we report bidirectional negative differential resistance (NDR) in Al(Ga)N/GaN/AlN resonant tunneling diodes grown on free-standing GaN substrates by RF-plasma assisted molecular beam epitaxy. Bidirectional NDR has exhibited a current-voltage (I-V) characteristic in both forward and reverse biases at room temperature. The positive peak current density is 160 kA/cm(2) with a peak to valley current ratio (PVCR) of 1.34, and the negative peak current density is 112 kA/cm(2) with a high PVCR of 1.56. The bidirectional NDR is attributed to the change in the polarization field in the active region, which is caused by the asymmetric barrier component.

Automated summary

This paper reports bidirectional negative differential resistance (NDR) in Al(Ga)N/GaN/AlN resonant tunneling diodes, grown on free-standing GaN substrates using RF-plasma assisted molecular beam epitaxy. The bidirectional NDR exhibits current-voltage characteristics in both forward and reverse biases at room temperature, attributed to the change in the polarization field in the active region caused by asymmetric barrier components.