Effect field controlled magnetization in NiFe2O4/SrRuO3/PMN-PT heterostructures for nonvolatile memory applications: XMCD study

Electric-field controlled magnetism is a potential way to realize strong magneto-electric (ME) coupling for nonvolatile memory applications. The electric field induced nonvolatile modulated magnetization was obtained in NiFe2O4/SrRuO3/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) thin film heterostructures. The collective effect of charge and strain significantly modified the magnetization of the NiFe2O4 layer in NiFe2O4/SrRuO3/PMN-PT heterostructures. The analysis of XMCD data establishes that the cation (Fe3+/Ni2+) redistribution occurs on tetrahedral and octahedral sites in the electric field poled NiFe2O4 films, confirming the coupling between magnetism and ferroelectric properties. The films demonstrate repeatable switching of sign of ME output voltage alpha (alpha = dP/dH) in response to the applied positive and negative electric pulse, which can be used to store binary information in the nonvolatile manner. The electric-field-controlled switching of alpha in thin films offers an energy-efficient approach for low-power-consumption nonvolatile memory devices.

Automated summary

Research indicates that electric-field controlled magnetism can achieve strong magneto-electric coupling for potential use in nonvolatile memory applications. Modulated magnetization induced by electric field can alter the magnetization state, while cation redistribution leads to the coupling between magnetism and ferroelectric properties.