Lu2O3: A promising ultrawide bandgap semiconductor for deep UV photodetector

Lutetium oxide (Lu2O3), an ultrawide semiconductor with an intrinsic bandgap of 5.5-5.9eV, has been proposed as a potential material for a high- performance deep-ultraviolet (DUV) photodetector. Here, crystal oriented Lu2O3 films with bandgap of 5.6eV are grown on GaN substrates through sputtering Lu2O3 target, based on which a graphene/Lu2O3/GaN DUV photovoltaic detector is constructed with its photoelectric performance being systematically studied. According to our research, under 0V bias and 185nm DUV irradiation, this device shows a high photoresponsivity of similar to 13.7 mu A/W, a short response time of similar to 0.4 s, and a high light to dark current ratio of >600, which is about 1 order of magnitude higher than that of a currently reported DUV photovoltaic detector based on other films grown by magnetron sputtering. This research helps to broaden the range of candidate materials for DUV photodetectors and can work as a significant reference to develop the technology for device fabrication.

Automated summary

In this study, Lutetium oxide films were successfully grown and a high-performance deep-ultraviolet photovoltaic detector was constructed, showing high photoresponsivity, short response time, and a high light to dark current ratio. This research helps broaden the range of candidate materials for DUV photodetectors and serves as a significant reference for technology development in device fabrication.