Journal
APPLIED PHYSICS LETTERS
Volume 118, Issue 26, Pages -Publisher
AIP Publishing
DOI: 10.1063/5.0050968
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Funding
- National Key Research and Development Plan (MOST) [2017YFA0205802]
- National Natural Science Foundation of China (NSFC) [11875212]
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The study focuses on the use of inorganic perovskite emitters in all-inorganic light-emitting diodes and finds that the Al2O3 interlayer plays a crucial role in determining electroluminescence performance by limiting electron-hole recombination within the perovskite, resulting in a shift to pure green emission peaks in the LEDs.
Inorganic perovskites, such as CsPbX3 (X = Cl, Br, I), have attracted attention due to their excellent thermal stabilities and high photoluminescence quantum efficiencies. Here, we report on all-inorganic light-emitting diodes (LEDs), including inorganic perovskite emitters (CsPbBr3) based on the heterostructure of n-ZnO/Al2O3/CsPbBr3/p-GaN. The effects of the CsPbBr3 and Al2O3 interlayers on the electroluminescence performance have been systematically investigated. It is observed that the Al2O3 interlayer plays an important role in determining the emission performance. By introducing the Al2O3 layers, the electron-hole recombination can almost be limited within the perovskite. The emission peaks of the heterojunction LEDs change from blue-green to pure green with the increased luminous intensities and decreased leakage currents. It provides an idea for the preparation of all-inorganic perovskite LEDs.
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