Journal
APPLIED PHYSICS EXPRESS
Volume 14, Issue 9, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.35848/1882-0786/ac1b3f
Keywords
bidirectional switch; p-GaN gate; HEMT; diode bridge; Schottky barrier diode
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Funding
- Key Research and Development Program of Shaanxi [2020ZDLGY03-05]
- Key-Area Research and Development Program of Guangdong Province [2020B010174001]
- National Natural Science Foundation of China [61574112, 61974115]
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The monolithic bidirectional switch based on p-GaN gate HEMT features four embedded Schottky barrier diodes, showing a high threshold voltage and low on-state voltage, suitable for AC power switching applications.
A p-GaN gate high electron mobility transistor (HEMT) based monolithic bidirectional switch with diode bridge structures is demonstrated. The bidirectional switch features four recessed anode Schottky barrier diodes embedded in a p-GaN HEMT, which effectively reduces the on-state voltage and minimizes the parasitic elements. The proposed device exhibits a high threshold voltage of 1.84 V, a low on-state voltage of 1.13 V, and a high forward and reverse off-state breakdown voltages of similar to 1100 V. In addition, the function of the bidirectional switch as an AC power chopper is successfully verified.
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