Plasma treatment effect on SnO2-GO nano-heterojunction: fabrication, characterization and optoelectronic applications

The production of semitransparent electrical conductive films is even more necessary due to their widespread utilization in research and industry. In this paper, the graphene oxide (GO) effects as an impurity on tin dioxide (SnO2) thin films and the SnO2-GO composite formation before and after plasma treatment have been studied to use in optoelectronic applications. The effects of graphene oxide addition and plasma treatment on the optical, electrical and structural properties of SnO2 thin films were investigated. According to the structural results of X-ray diffraction spectrum before and after applying the plasma, SnO2 thin film has a polycrystalline structure with tetragonal cassiterite phase and no peak related to impurity or other phases is seen. According to the electrical results, due to applying plasma in both pure tin oxide sample and SnO2-GO sample, the strength and resistance of the sheet decreased, but the mobility and density of the carriers increased. According to the optical results, the thin films of SnO2 show a large transfer of 75-90%, and the transfer rate is reduced by adding the graphene oxide to SnO2-GO nanocomposite. The refractive index and extinction coefficient were also evaluated for SnO2 films and SnO2-GO nanocomposite before and after plasma treatment.

Automated summary

This paper investigates the effects of graphene oxide on tin dioxide thin films, as well as the formation of the SnO2-GO composite before and after plasma treatment, for potential optoelectronic applications. The study shows changes in optical, electrical, and structural properties of SnO2 thin films with graphene oxide addition and plasma treatment, suggesting promising applications in the field.