Thermal-Responsive Polyoxometalate-Metalloviologen Hybrid: Reversible Intermolecular Three-Component Reaction and Temperature-Regulated Resistive Switching Behaviors

The development of new-type memristors with special performance is of great interest. Herein, an inorganic-organic hybrid crystalline polyoxometalate (POM) with usual dynamic structures is reported and used as active material for fabricating memristor with unique temperature-regulated resistive switching behaviors. The hybrid POM not only exhibits tunable thermochromic properties, but also thermal-induced reversible aggregation and disaggregation reactions, leading to reversible structural transformations in SCSC fashion. Further, the memory device using the hybrid POM as active layer exhibits uncommon performance, which can keep resistive switching silent in the low temperature range of 30-150 degrees C, but show nonvolatile memory behavior in the high temperature range of 150-270 degrees C. Particularly, the silent and working states at three special temperatures (30, 150 and 270 degrees C) can be monitored by chromism. The correlation between structure and resistive switching property of the material has been discussed. The work demonstrates that crystalline inorganic-organic hybrid POMs are promising materials for making memristors with superior performance.

Automated summary

This study reports an inorganic-organic hybrid crystalline polyoxometalate with special performance as an active material for memristor, showing unique temperature-regulated resistive switching behaviors. The memory device using this hybrid POM exhibits uncommon performance, with states at different temperatures monitored by chromism. This work demonstrates the promising prospect of crystalline inorganic-organic hybrid POMs for superior memristor performance.