Large-Area Epitaxial Film Growth of van der Waals Ferromagnetic Ternary Chalcogenides

Following the first experimental realization of intrinsic ferromagnetism in 2D van der Waals (vdW) crystals, several ternary metal chalcogenides with unprecedented long-range ferromagnetic order have been explored. However, the synthesis of large-area 2D ternary metal chalcogenide thin films is a great challenge, and a generalized synthesis has not been demonstrated yet. Here, a quick and scalable synthesis of epitaxially aligned ferromagnetic ternary metal chalcogenide thin films (Cr2Ge2Te6, Cr2Si2Te6, Mn3Si2Te6) is reported. The synthesis is based on the flux-controlled surface diffusion of Te on metal (Cr, Mn)-deposited wafer (Ge, Si) substrates. Magnetic anisotropy study of the epitaxial ternary thin films reveals the intrinsic magnetic easy axis; out-of-plane direction for Cr2Ge2Te6 and Cr2Si2Te6, and in-plane direction for Mn3Si2Te6. In addition to the synthesis, this work creates an opportunity for transfer-free device fabrication for realizing magnetoelectronics based on the electrical control of both charge and spin degrees of freedom in 2D ferromagnetic semiconductors.

Automated summary

This study presents a rapid and scalable method for synthesizing ferromagnetic thin films of ternary metal chalcogenides, with revealed magnetic anisotropy directions. It not only provides an opportunity for device fabrication without transfer for controlling charge and spin degrees of freedom in 2D ferromagnetic semiconductors, but also overcomes the challenge of synthesizing large-area 2D ternary metal chalcogenide thin films.