Electrostatically Tunable Near-Infrared Plasmonic Resonances in Solution-Processed Atomically Thin NbSe2

In the broad spectral range, near-infrared (NIR) plasmonics find applications in telecommunication, energy harvesting, sensing, and more, all of which would benefit from an electrostatically controllable NIR plasmon source. However, it is difficult to control bulk NIR plasmonics directly with electrostatics because of the strong electric-field screening effect and high carrier concentration required to support NIR plasmons. Here, this constraint is overcome and the observation of NIR plasmonic resonances that can be modulated electrostatically over a range of approximate to 360 cm(-1) in few-layer NbSe2 gratings is reported, thanks to the enhanced electrostatics of atomically thin 2D materials and the high-quality film produced by a solution method. NbSe2 plasmons also render strong field confinement due to their atomic thickness and provide an extra degree of resonance frequency modulation from the layered structure. This study identifies metallic 2D materials as promising (easily produced and well-performing) candidates to extend electrostatically tunable plasmonics to the technologically important NIR range.

Automated summary

The study successfully achieved electrostatically modulated NIR plasmonic resonances over a range of approximately 360 cm(-1) in few-layer NbSe2 gratings, thanks to the enhanced electrostatics of atomically thin 2D materials and high-quality film produced by a solution method. NbSe2 plasmons, with their atomic thickness, provide strong field confinement and an additional degree of resonance frequency modulation.