Synaptic Plasticity Powering Long-Afterglow Organic Light-Emitting Transistors

Long-lasting luminescence in optoelectronic devices is highly sought after for applications in optical data storage and display technology. While in light-emitting diodes this is achieved by exploiting long-afterglow organic materials as active components, such a strategy has never been pursued in light-emitting transistors, which are still rather unexplored and whose technological potential is yet to be demonstrated. Herein, the fabrication of long-afterglow organic light-emitting transistors (LAOLETs) is reported whose operation relies on an unprecedented strategy based on a photoinduced synaptic effect in an inorganic indium-gallium-zinc-oxide (IGZO) semiconducting channel layer, to power a persistent electroluminescence in organic light-emitting materials. Oxygen vacancies in the IGZO layer, produced by irradiation at lambda = 312 nm, free electrons in excess yielding to a channel conductance increase. Due to the slow recombination kinetics of photogenerated electrons to oxygen vacancies in the channel layer, the organic material can be fueled by postsynaptic current and displays a long-lived light-emission (hundreds of seconds) after ceasing UV irradiation. As a proof-of-concept, the LAOLETs are integrated in active-matrix light-emitting arrays operating as visual UV sensors capable of long-lifetime green-light emission in the irradiated regions.

Automated summary

A new type of long-afterglow organic light-emitting transistors (LAOLETs) has been developed, utilizing a photoinduced synaptic effect in an inorganic indium-gallium-zinc-oxide (IGZO) semiconductor channel layer. This allows for persistent electroluminescence in organic light-emitting materials, with the LAOLETs integrated into active-matrix light-emitting arrays functioning as visual UV sensors capable of long-lifetime green-light emission in irradiated regions.